In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication
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Published:2023-06-21
Issue:7
Volume:14
Page:1278
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Yang Yannan1, Fan Rong1, Zhang Penghao1, Wang Luyu1, Pan Maolin1, Wang Qiang1, Xie Xinling1, Xu Saisheng1, Wang Chen1, Wu Chunlei1, Xu Min1, Jin Jian1, Zhang David Wei1
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Abstract
In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved the Al2O3/AlGaN interface with Dit of ~2 × 1012 cm−2 eV−1, and thus effectively reduced the current collapse and the dynamic Ron degradation. The devices showed good electrical performance with low Vth hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with VDS,Q = 40 V (period of 1 ms, pulse width of 1 μs), the dynamic Ron increase of ~14.1% was achieved.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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