Author:
Leuschner Rainer,Pawlowski Georg
Abstract
AbstractThe sections in this article areIntroductionExposure ToolsImage Formation and ResolutionContact and Proximity PrintingOptical Mask AlignerX‐Ray StepperProjection PrintingNearUVProjection SystemsDeepUVProjection SystemsNonconventionalUVLithographyPost‐Optical LithographyPhotoresist ProcessingQuality Control and Resist DepositionPurity and Storage StabilityResist CoatingResist Exposure and DevelopmentCharacteristic Curve and Standing Wave EffectsProcess LatitudesDissolution Rate and Development MethodsPattern Inspection and Resist Profile SimulationEtching, Resist Stripping and PlanarizationPhotoresistsPrinciples of Photoresist ChemistryNegative‐Tone ResistsPhotocrossslinking Via AzidesFree‐Radical‐Initiated PolymerizationAcid‐Catalyzed CrosslinkingPositive‐Tone ResistsDissolution Inhibition/Dissolution PromotionAcid‐Catalyzed DeblockingPolymer DegradationSolvents for Photoresists and Main Resist SuppliersSpecial Photoresist TechniquesNonconventional Diazo Resist ProcessesResist Profile Modification and Image ReversalBilayer Systems for Contrast EnhancementSuppression of Reflections and Standing Wave EffectsDyed ResistsAntireflective LayersSilicon‐Containing Multilayer ResistsNegative‐Tone Silicon Bilayer ResistsPositive‐Tone Silicon Bilayer ResistsTop Surface ImagingGas Phase Silylation SystemsLiquid Phase Silylation SystemsTrends in Photolithography
Cited by
1 articles.
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