Empirical equations for predicting resistivity changes with fluence for electron-irradiated silicon-Reference-Cited by-同舟云学术

Empirical equations for predicting resistivity changes with fluence for electron-irradiated silicon

Published:1980-01-16 Issue:1 Volume:57 Page:K11-K15
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Yasuda K.,Takeda M.,Masuda H.,Ikuta S.,Wada T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Introduction Rates of Electrically Active Defects in n‐ and p‐Type Silicon by Electron and Neutron Irradiation

2. Electrical properties of electron‐irradiatedn‐type silicon

3. Complex defects introduced into Si by high‐energy electron irradiation: Production rates of defects in n‐Si

4. Design curves for predicting fast-neutron-induced resistivity changes in silicon

5. Microwave Semiconductor Devices: Fundamentals and Radiation Effects, John Wiley and Sons, New York 1973 (p. 122).

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