Ultra-sharp boron interfaces for delta doped diamond structures
Author:
Funder
ANR
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201105480/fullpdf
Reference16 articles.
1. Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers
2. High hole mobility in boron doped diamond for power device applications
3. Extreme dielectric strength in boron doped homoepitaxial diamond
4. High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
5. Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth
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1. High efficiency of boron doping and fast growth realized with a novel gas inlet structure in diamond microwave plasma chemical vapor deposition system;Carbon Letters;2023-12-13
2. Hopping conduction of non metallic heavily doped delta-layers in CVD diamond;Diamond and Related Materials;2021-06
3. A Phenomenological Model of Mott's Insulator–Metal Phase Transition in 3D and 2D Boron‐Doped Diamond;physica status solidi (b);2020-05-20
4. The occupied electronic structure of ultrathin boron doped diamond;Nanoscale Advances;2020
5. Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers;Semiconductors;2019-10
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