P‐Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p + Polysilicon and Screen Printed Ag Metallization
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems (ISE)Heidenhofstrasse 279110 FreiburgGermany
2. Tempress SystemsRadeweg 318171 MDVaassenThe Netherlands
3. Amtech Systems Inc.Radeweg 318171 MDVaassenThe Netherlands
Funder
European Commission
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900064
Reference26 articles.
1. ITRPV consortium International Technology Roadmap for Photovoltaic 9th edition September2018.
2. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells
3. n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
4. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
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