19% efficientn‐type Czochralski silicon solar cells with screen‐printed aluminium‐alloyed rear emitter

Abstract

AbstractHigh and stable lifetimes recently reported for n‐type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n‐type Si wafers for manufacturing simple and industrially feasible high‐efficiency solar cells, we focus on back junction n+np+solar cells featuring an easy‐to‐fabricate full‐area screen‐printed aluminium‐alloyed rear p+emitter. Independently confirmed record‐high efficiencies have been achieved on n‐type phosphorus‐doped Czochralski‐grown silicon material: 18·9% for laboratory‐type n+np+solar cells (4 cm2) with shadow‐mask evaporated front contact grid and 17·0% for front and rear screen‐printed industrial‐type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination. Copyright © 2006 John Wiley & Sons, Ltd.