Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration-Reference-Cited by-同舟云学术

Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

Published:2015-04-11 Issue:12 Volume:23 Page:1896-1900
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Fujita Hiromi¹²,Carrington Peter J.¹,Wagener Magnus C.³,Botha Johannes R.³,Marshall Andrew R. J.¹,James Juanita¹,Krier Anthony¹,Lee Kan-Hua⁴,Ekins-Daukes Nicholas John⁴

Affiliation:

1. Department of Physics; Lancaster University; Lancaster LA1 4YB UK

2. Asahi Kasei Corporation; 2-1 Samejima Fuji-city Shizuoka 416-8501 Japan

3. Department of Physics; Nelson Mandela Metropolitan University; Port Elizabeth South Africa

4. Blackett Laboratory; Imperial College London; Prince Consort Road London SW7 2BZ UK

Funder

EPSRC

EU Marie-Curie Training networks

PROMIS

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2615/fullpdf

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4. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells;Oshima;Applied Physics Letters,2008

5. Highly stacked and well-aligned In0.4Ga0.6As quantum dot solar cells with In0.2Ga0.8As cap layer;Sugaya;Applied Physics Letters,2010

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