Affiliation:
1. School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China
2. Terahertz Technology and Wireless Communication Research Center, The Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China
3. Electronic Devices Institute Nanjing China
Abstract
AbstractIn this letter, a method for designing a Doherty power amplifier (DPA) using bare die and bonding wires (BWs) is proposed. This method adjusts the geometric parameters of BWs to achieve the desired transmission characteristics, allowing BWs to actively participate in the formation of the matching network, thus realizing the codesigning of the DPA and BWs. By designing appropriate BWs compensation to mitigate the intrinsic parasitics of bare die, the inherent obstacles caused by transistor parasitic effects are mitigated. This strategy offers a distinct advantage in terms of concurrently adjusting the target load impedance and phase, leading to a streamlined DPA design process. At the same time, the nonclipping impedance region is expanded, which attenuates the nonlinear effects of parasitic effects. On the basis of the proposed methodology, a DPA operating at 3–4 GHz is designed. Measured results show that the DPA achieves a saturation output power of 42.4–43.6 dBm in the operating band, accompanied by a drain efficiency of 55%–66%, while achieving 42%–54% at 6 dB output back‐off level.