Microstructural and Optoelectronic Properties of SiGe:H Films at the Transition Edge Fabricated by PECVD-Reference-Cited by-同舟云学术

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Microstructural and Optoelectronic Properties of SiGe:H Films at the Transition Edge Fabricated by PECVD

Published:2018-07-19 Issue:9 Volume:53 Page:1700141
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Fan Shanshan¹²,Guo Qiang³,Wang Xinzhan³,Yu Wei³,Fu Guangsheng³

Affiliation:

1. School of Electronic and Information Engineering; Hebei University of Technology; Tianjin 300401 China

2. School of Science; Hebei University of Technology; Tianjin 300401 China

3. College of Physics Science and Technology; Hebei University; Baoding 071002 China

Funder

Key Basic Research Project of Hebei Province, China

Natural Science Foundation of Hebei Province

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201700141/fullpdf

Reference22 articles.

1. On light‐induced effect in amorphous hydrogenated silicon

2. B. J. Yan G. Z. Yue J. Yang presented at 33rd IEEE Photovoltaic Specialists Conference, San Diego, CA May 2008

3. Thermal annealing of protocrystalline a-Si:H

4. High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer

5. Protocrystalline Silicon at High Rate from Undiluted Silane

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1. Narrow band gap high conducting nc-Si1-xGex:H absorber layers for tandem structure nc-Si solar cells;Journal of Alloys and Compounds;2019-10

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