Vacancy‐Induced Extraordinary Second Harmonic Generation Response for Diamond‐Like Cu3PS4

Author:

Guo Weiping12,Fu Yudi12,Cui Hong‐Hua3,Li Lingyun1ORCID,Yu Yan1,Luo Zhong‐Zhen12ORCID,Zou Zhigang1245

Affiliation:

1. Key Laboratory of Eco‐materials Advanced Technology Key Laboratory of Advanced Materials Technologies International (HongKong Macao and Taiwan) Joint Laboratory on Advanced Materials Technologies College of Materials Science and Engineering Fuzhou University Fuzhou 350108 China

2. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 China

3. Mechanical and Electrical Engineering Practice Center Fuzhou University Fuzhou 350108 China

4. Eco‐materials and Renewable Energy Research Center College of Engineering and Applied Sciences Nanjing University Nanjing 210093 China

5. National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 China

Abstract

AbstractImproving polarizability is an important strategy for designing high‐performance mid‐infrared (mid‐IR) nonlinear optical (NLO) materials. The substitution of equivalent or aliovalent atoms can manipulate the polarizability by adjusting the symmetry of the polyhedron. Herein, the Li+ and Cd2+ are introduced into the Cu3PS4 as the equivalent and aliovalent dopants for the Cu site. As a result, Li+ can significantly improve the bandgap (Eg) of LixCu3−xPS4 from 2.38 to 2.88 eV, leading to a higher laser‐induced damage threshold (LIDT) of 4.9 times than AgGaS2 (AGS) with a comparable second harmonic generation (SHG) response of AGS (26−45 µm). Interestingly, Cd2+ can improve the SHG response and enlarge the Eg simultaneously. As a result, Cd0.4Cu2.2PS4 has a large SHG response of 10 × AGS at 2050 nm (26−45 µm) and a LIDT of 2.6 × AGS. Theoretical calculations reveal that lattice vacancies induced by Cd2+ significantly boost polarizability compared to LixCu3−xPS4 with no vacancy, leading to a strong NLO response.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

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