Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)-Reference-Cited by-同舟云学术

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

Published:2020-09-21 Issue:22 Volume:8 Page:2000970
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Li Keshuang¹,Yang Junjie¹,Lu Ying¹,Tang Mingchu¹^ORCID,Jurczak Pamela¹,Liu Zizhuo¹,Yu Xuezhe¹,Park Jae‐Seong¹,Deng Huiwen¹,Jia Hui¹,Dang Manyu¹,Sanchez Ana M.²,Beanland Richard²,Li Wei³,Han Xiaodong³,Zhang Jin‐Chuan⁴,Wang Huan⁴,Liu Fengqi⁴,Chen Siming¹,Seeds Alwyn¹,Smowton Peter⁵,Liu Huiyun¹

Affiliation:

1. Department of Electronic and Electrical Engineering University College London London WC1E 7JE UK

2. University of Warwick Coventry CV4 7AL UK

3. Institute of the Microstructure and Properties of Advanced Materials Beijing University of Technology Beijing 100124 China

4. Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

5. Department of Physics and Astronomy Cardiff University Queens Building, The Parade Cardiff CF24 3AA UK

Funder

Engineering and Physical Sciences Research Council

Royal Academy of Engineering

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202000970

Reference50 articles.

1. Electrically pumped continuous-wave III–V quantum dot lasers on silicon

2. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

3. Integration of III-V lasers on Si for Si photonics

4. Recent progress in lasers on silicon

5. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

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