Affiliation:
1. Research Center for Crystal Materials CAS Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Science (CAS) Urumqi 830011 China
2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
Abstract
AbstractThe development of anti‐laser damage infrared (IR) nonlinear optical (NLO) materials is an urgent need but challenging due to the contradiction between wide bandgap and large NLO coefficient. Herein, by introducing a halogen into the NLO‐active tetrahedral unit, two halogenated metal chalcogenides Cs3Ga8S13Cl and Cs9Ga8Se12Cl9 with unprecedented [GaQ3Cl] (Q = S/Se) tetrahedral units are rationally designed and fabricated in experiments by the flux method, enriching the chemical and structural diversity of chalcogenides. Cs3Ga8S13Cl shows a wide bandgap of ≈3.76 eV, resulting in a high laser‐induced damage threshold of ≈8 × AgGaS2 (AGS) and a moderate NLO response (≈0.6 × AGS) with phase‐matching behavior. The results imply that Cs3Ga8S13Cl is a promising IR NLO material for the high powder laser application and demonstrate the feasibility of the halogenated tetrahedron strategy in regulating the optical properties of chalcogenides.
Funder
National Natural Science Foundation of China
Xinjiang Key Laboratory of Electronic Information Materials and Devices
Innovative Research Group Project of the National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
12 articles.
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