Eliminating Leakage Current in Thin‐Film Transistor of Solution‐Processed Organic Material Stack for Large‐Scale Low‐Power Integration-Reference-Cited by-同舟云学术

Eliminating Leakage Current in Thin‐Film Transistor of Solution‐Processed Organic Material Stack for Large‐Scale Low‐Power Integration

Published:2022-04-27 Issue:9 Volume:8 Page:2200014
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Han Lei¹,Li Jun¹,Ogier Simon²,Liu Zhe³,Deng Li'ang¹,Cao Yu¹,Shan Tong¹,Sharkey Dan²,Feng Linrun³,Guo Aiying⁴,Li Xifeng⁴,Zhang Jianhua⁴,Guo Xiaojun¹^ORCID

Affiliation:

1. Department of Electronic Engineering Shanghai Jiao Tong University Shanghai 200240 China

2. SmartKem Ltd. Neville Hamlin Building Thomas Wright Way, NetPark Sedgefield TS21 3FG UK

3. LinkZill Technology Co., Ltd Hangzhou 310000 China

4. Key Laboratory of Advanced Display and System Applications Shanghai University 149 Yanchang Road Shanghai 200072 China

Funder

National Basic Research Program of China

National Outstanding Youth Science Fund Project of National Natural Science Foundation of China

National Science Fund for Distinguished Young Scholars

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200014

Reference77 articles.

1. Flexible organic transistors and circuits with extreme bending stability

2. Flexible active-matrix displays and shift registers based on solution-processed organic transistors

3. A bright future for organic field-effect transistors

4. Current Status and Opportunities of Organic Thin-Film Transistor Technologies

5. Printed subthreshold organic transistors operating at high gain and ultralow power

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