Affiliation:
1. Department of Electrical and Computer Engineering Cornell University Ithaca NY 14853 USA
2. OWiC Technologies Ithaca NY 14853 USA
3. Laboratory of Atomic and Solid‐State Physics Cornell University Ithaca NY 14853 USA
4. Kavli Institute at Cornell for Nanoscale Science Cornell University Ithaca NY 14853 USA
Abstract
AbstractA general transfer method is presented for the heterogeneous integration of different photonic and electronic materials systems and devices into a single substrate. Called BLAST, for Bond, Lift, Align, and Slide Transfer, the process works at wafer scale and offers precision alignment, high yield, varying topographies, and suitability for subsequent lithographic processing. BLAST's capabilities is demonstrated by integrating both GaAs and GaN µLEDs with silicon photovoltaics to fabricate optical wireless integrated circuits that up‐convert photons from the red to the blue. The study also shows that BLAST can be applied to a variety of other devices and substrates, including CMOS electronics, vertical cavity surface emitting lasers (VCSELs), and 2D materials. BLAST further enables the modularization of optoelectronic microsystems, where optical devices fabricated on one material substrate can be lithographically integrated with electronic devices on a different substrate in a scalable process.
Funder
Cornell Center for Materials Research
Air Force Office of Scientific Research
National Science Foundation
Kavli Institute at Cornell, Cornell University
College of Arts and Sciences, Cornell University
Subject
Electronic, Optical and Magnetic Materials