Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN-Reference-Cited by-同舟云学术

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Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

Published:2021-06-19 Issue:9 Volume:7 Page:2100345
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Wahl Ulrich¹^ORCID,Correia João Guilherme¹^ORCID,Costa Ângelo R. G.¹^ORCID,David‐Bosne Eric¹^ORCID,Kappers Menno J.²,da Silva Manuel Ribeiro³,Lippertz Gertjan⁴^ORCID,Lima Tiago A. L.⁵,Villarreal Renan⁵^ORCID,Vantomme André⁵^ORCID,Pereira Lino M. C.⁵

Affiliation:

1. Centro de Ciências e Tecnologias Nucleares Departamento de Engenharia e Ciências Nucleares Instituto Superior Técnico Universidade de Lisboa Bobadela LRS 2695‐066 Portugal

2. Cambridge Centre for Gallium Nitride University of Cambridge Cambridge CB3 0FS UK

3. CICECO Institute of Materials Universidade de Aveiro Aveiro 3810‐193 Portugal

4. Institute of Physics II University of Cologne Cologne 50937

5. KU Leuven Quantum Solid‐State Physics Leuven 3001 Belgium

Funder

Onderzoeksraad, KU Leuven

Horizon 2020 Framework Programme

Fonds Wetenschappelijk Onderzoek

Fundação para a Ciência e a Tecnologia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100345

Reference48 articles.

1. Gallium nitride devices for power electronic applications

2. Merits of gallium nitride based power conversion

3. The 2018 GaN power electronics roadmap

4. Materials and processing issues in vertical GaN power electronics

5. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study of recombination-enhanced migration of an interstitial magnesium in gallium nitride;Physical Review B;2024-08-16

2. Overcoming the compensation of acceptors in GaN:Mg by defect complex formation;APL Materials;2023-08-01

3. Magnesium-Vacancy Optical Centers in Diamond;ACS Photonics;2022-12-13

4. Direct evidence of Be as an amphoteric dopant in GaN;Physical Review B;2022-05-27

5. Fe implantation induced lattice defects and their recovery in GaN;Hyperfine Interactions;2021-12-21

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