Field Emission in Ultrathin PdSe 2 Back‐Gated Transistors-Reference-Cited by-同舟云学术

Field Emission in Ultrathin PdSe 2 Back‐Gated Transistors

Published:2020-05-20 Issue:7 Volume:6 Page:2000094
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Di Bartolomeo Antonio¹²^ORCID,Pelella Aniello¹²,Urban Francesca¹²^ORCID,Grillo Alessandro¹²^ORCID,Iemmo Laura¹²^ORCID,Passacantando Maurizio³^ORCID,Liu Xiaowei⁴,Giubileo Filippo²^ORCID

Affiliation:

1. Physics Department “E. R. Caianiello” and Interdepartmental Centre NanoMatesUniversity of Salerno via Giovanni Paolo II n. 132 Fisciano 84084 Italy

2. Department of Physical and Chemical ScienceUniversity of L’Aquila and CNR‐SPIN L’Aquila, via Vetoio L’Aquila 67100 Italy

3. CNR‐SPIN Salerno via Giovanni Paolo II n. 132 Fisciano 84084 Italy

4. National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing University Nanjing 210093 China

Funder

PICO & PRO

RINASCIMENTO

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000094

Reference67 articles.

1. Recent Advances in Ultrathin Two-Dimensional Nanomaterials

2. Transition Metal Dichalcogenides Properties and Applications