In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts
Author:
Affiliation:
1. KAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
2. Department of Physics Faculty of Science and Arts Al‐Baha University Al‐Makhwah 65931 Saudi Arabia
Funder
King Abdullah University of Science and Technology
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202000589
Reference41 articles.
1. Nitric acid oxidation of Si method for improvement of crystalline Si solar cell characteristics by surface passivation effect
2. Formation of 10–30nm SiO2/Si structure with a uniform thickness at ∼120°C by nitric acid oxidation method
3. Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density
4. Passivation of a (100) Silicon Surface by Silicon Dioxide Grown in Nitric Acid
5. Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
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1. Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System;IEEE Journal of Photovoltaics;2024-03
2. Poly‐SiOx Passivating Contacts with Plasma‐Assisted N2O Oxidation of Silicon (PANO‐SiOx);Solar RRL;2023-07-14
3. Inaccuracies in contact resistivity from the Cox–Strack method: A review;Solar Energy Materials and Solar Cells;2022-10
4. Mass production of crystalline silicon solar cells with polysilicon‐based passivating contacts: An industrial perspective;Progress in Photovoltaics: Research and Applications;2022-09-05
5. Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells;ACS Applied Energy Materials;2021-04-22
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