L <sub>G</sub> 55 nm T‐gate <scp>InGaN</scp> / <scp>GaN</scp> channel based <scp>high electron mobility transistors</scp> for stable transconductance operation-Reference-Cited by-同舟云学术

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Published:2022-07-08 Issue:10 Volume:32 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Mic Comp-Aid Eng

Author:

Angamuthu Revathy¹^ORCID,ChettiaGoundar Sengodan Boopathi¹,Anandan Mohanbabu²,Varghese Arathy³,Vakkalakula Bharath Sreenivasulu⁴

Affiliation:

1. Department of Electrical and Electronics Engineering SRM Institute of Science and Technology, Kattankulathur Chennai India

2. Department of Electronics and Communication Engineering SRM Institute of Science and Technology, Ramapuram Campus Chennai India

3. School of Engineering Cardiff University Wales UK

4. School of Electronics Engineering (SENSE) VIT University Chennai India

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference44 articles.

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