Ultrathin Niobium‐Doped Indium Oxide Active Layer Enables High‐Performance Phototransistors for Driving Quantum‐Dot Light‐Emitting Diodes

Author:

Lin Jianrong1,Fang Wenhui2,Tan Haixing1,Zhang Haojun1,Dai Jingfei3,Liu Ziqing3,Liu Si1,Chen Jianwen3,Wu Runfeng2,Xu Hua4,Ng Kar Wei5,Xiao Peng1ORCID,Liu Baiquan2ORCID

Affiliation:

1. Guangdong‐Hong Kong‐Macao Joint Laboratory for Intelligent Micro‐Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering Foshan University Foshan 528225 China

2. Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology Sun Yat‐sen University Guangzhou 510275 China

3. School of Electronic and Information Engineering Foshan University Foshan 528000 China

4. Guangzhou New Vision Opto‐electronic Technology Co., Ltd. Kaiyuan Road 11, Luogang Guangzhou 510730 China

5. Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering University of Macau Avenida da Universidade Taipa Macau 999078 China

Abstract

AbstractActive materials play a crucial role in the performance of phototransistors. However, the discovery of a novel and versatile active material is a big challenge. For the first time, phototransistors with ultrathin niobium‐doped indium oxide (InNbO) active layer are fabricated. The InNbO phototransistors without additional light‐absorbing layers exhibit the performance with a high average mobility of 22.86 cm2 V−1s−1, a turn‐on voltage of −0.75 V, a low sub threshold swing of 0.18 V/decade, and a high on/off current ratio of 5.74 × 108. Detailed studies show that Nb is the key to suppress the free carrier generation due to the strong bonding strength of Nb─O. In addition, the InNbO phototransistors exhibit a very broad spectral responsivity with a photocurrent of 4.72 × 10−4 A, a photosensitivity of 1.69 × 108, and a high detectivity of 3.33 × 1013 Jones under violet (405 nm) light illumination, which is significantly higher than that of the IGZO phototransistors. Furthermore, an active‐matrix quantum‐dot light‐emitting diode pixel circuit based on InNbO phototransistors is demonstrated. The findings not only indicate that InNbO is a new active material for phototransistors, but also suggest that InNbO‐based phototransistors have a great potential for the next‐generation interactive display technology.

Funder

National Natural Science Foundation of China

Publisher

Wiley

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3