Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces-Reference-Cited by-同舟云学术

Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

Published:2020-06-30 Issue:12 Volume:52 Page:933-938
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf Interface Anal

Author:

Romanyuk Oleksandr¹^ORCID,Supplie Oliver²^ORCID,Paszuk Agnieszka²,Stoeckmann Jan Philipp²,Wilks Regan George³⁴,Bombsch Jakob³,Hartmann Claudia³,Garcia‐Diez Raul³,Ueda Shigenori⁵,Bartoš Igor¹,Gordeev Ivan¹,Houdkova Jana¹,Kleinschmidt Peter²,Bär Marcus³⁴⁶⁷,Jiříček Petr¹,Hannappel Thomas²

Affiliation:

1. Department of Optical Materials Institute of Physics of the Czech Academy of Sciences Prague Czech Republic

2. Department of Fundamentals of Energy Materials, Institute of Physics Ilmenau University of Technology Ilmenau Germany

3. Department of Interface Design Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Berlin Germany

4. Energy Materials In‐Situ Laboratory Berlin (EMIL) Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Berlin Germany

5. Synchrotron X‐ray Station at SPring‐8 National Institute for Materials Science (NIMS) Sayo Hyogo Japan

6. Department of Chemistry and Pharmacy Friedrich‐Alexander‐Universität Erlangen‐Nürnberg Erlangen Germany

7. Research Department X‐ray Spectroscopy at Interfaces of Thin Films Helmholtz‐Institute Erlangen‐Nürnberg for Renewable Energy (HI ERN) Berlin Germany

Funder

Ministry of Education, Culture, Sports, Science and Technology

Deutsche Stiftung Friedensforschung

Grantová Agentura České Republiky

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.6829

Reference20 articles.

1. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;May MM;Advanced Materials Interfaces,2017