Dislocation trails in Si: Geometry and electrical properties
Author:
Affiliation:
1. Institute of Microelectronics Technology RAS142432ChernogolovkaRussia
2. Institute of Solid State Physics RAS142432ChernogolovkaRussia
3. National University of Science and Technology MISiS119049MoscowRussia
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700074
Reference11 articles.
1. Evidence of Dislocation Jogs in Deformed Silicon
2. On the real structure of monocrystalline silicon near dislocation slip planes
3. Recombination properties of dislocation slip planes
4. Extended defects generated in the slip plane by moving dislocation in diamond lattice crystals: morphology and properties
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon;Semiconductors;2021-07
2. Electron‐Beam‐Induced Current and Deep‐Level Transient Spectroscopy Study of Dislocation Trails in Au‐Doped Si;physica status solidi (a);2021-05-28
3. Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study;physica status solidi (a);2019-07-22
4. Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon;Semiconductors;2019-04
5. Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress;Journal of Alloys and Compounds;2019-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3