High‐performance MEMS shutter display with metal‐oxide thin‐film transistors and optimized MEMS element

Author:

Al Nusayer Sheikh Abdullah1ORCID,Schalberger Patrick1,Baur Holger1,Kleber Florian1,Fruehauf Norbert1

Affiliation:

1. Institute for Large Area Microelectronics and Research Centre SCoPE University of Stuttgart Stuttgart Germany

Abstract

AbstractActive matrix prestressed microelectromechanical shutter displays enable outstanding optical properties as well as robust operating performance. The microelectromechanical systems (MEMS) shutter elements have been optimized for higher light outcoupling efficiency with lower operation voltage and higher pixel density. The MEMS elements have been co‐fabricated with self‐aligned metal‐oxide thin‐film transistors (TFTs). Several optimizations were required to integrate MEMS process without hampering the performance of both elements. The optimized display process requires only seven photolithographic masks with ensuring proper compatibility between MEMS shutter and metal‐oxide TFT process.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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