A Temperature Sensory Leaky Integrate‐and‐Fire Artificial Neuron Based on Chitosan/PNIPAM Bilayer Volatile Complementary Resistive Switching Memristor

Abstract

AbstractThe presence of neurons is crucial in neuromorphic computing systems as they play a vital role in modulating the strength of synapses through the release of either excitatory or inhibitory stimuli. Hence, the development of sensory neurons plays a pivotal role in broadening the scope of brain‐inspired neural computing. The present study introduces an artificial sensory neuron, which is constructed using a temperature‐sensitive volatile complementary resistance switch memristor based on the functional layer of the chitosan/PNIPAM bilayer. The resistive switching behavior arises from the formation and ionization of oxygen vacancy filaments, whereby the threshold voltage and low resistive resistance of the device exhibit a temperature‐dependent increase within the range of 290–410 K. A functional replication of a neuron with leaky integration and firing has been successfully developed, effectively simulating essential biological functions such as firing triggered by threshold, refractory period implementation, and modulation of spiking frequency. The artificial sensory neuron exhibits characteristics similar to those of leaky integrated firing neurons that receive temperature inputs. It has the potential to control the output frequency and amplitude under varying temperature conditions, making it suitable for temperature‐sensing applications. This study presents a potential hardware implementation for developing efficient artificial intelligence systems that can support temperature detections.