Naphthalene Diimide‐Modified SnO2 Enabling Low‐Temperature Processing for Efficient ITO‐Free Flexible Perovskite Solar Cells

Author:

Cho Il‐Wook12,Kim Ga Yeon1,Kim Sangcho1,Lee Yu‐Jun3,Oh Jaewon2,Ryu Mee‐Yi2,Lee Jinho4,Lee Min Soo5,Jang Soo‐Young1ORCID,Lee Kwanghee36ORCID,Kang Hongkyu1ORCID

Affiliation:

1. Research Institute for Solar and Sustainable Energies Gwangju Institute of Science and Technology (GIST) 123, Cheomdangwagi‐ro, Buk‐gu Gwangju 61005 Republic of Korea

2. Department of Physics Kangwon National University 1, Gangwondaehak‐gil Chuncheon‐si 24341 Republic of Korea

3. Heeger Center for Advanced Materials Gwangju Institute of Science and Technology (GIST) 123, Cheomdangwagi‐ro, Buk‐gu Gwangju 61005 Republic of Korea

4. Department of Physics Incheon National University 119 Academy‐ro Incheon 22012 Republic of Korea

5. MSWAY CO, LTD. 801‐1, 30, Digital‐ro 32‐gil, Guro‐gu Seoul 08390 Republic of Korea

6. School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 123, Cheomdangwagi‐ro, Buk‐gu Gwangju 61005 Republic of Korea

Abstract

AbstractA low‐cost and indium‐tin‐oxide (ITO)‐free electrode‐based flexible perovskite solar cell (PSC) that can be fabricated by roll‐to‐roll processing shall be developed for successful commercialization. High processing temperatures present a challenge for the PSC fabrication on flexible substrates. The most efficient planar n–i–p PSC structures, which utilize a metal oxide as an electron transport layer (ETL), necessitate high annealing temperatures. In addition, the device performance deteriorates owing to the migration of halogen ions, which causes the oxidation of the metal electrodes. These drawbacks conflict with the development of highly efficient flexible PSCs fabricated on ITO‐free transparent electrodes. Herein, an efficient ETL material that enables low‐temperature processing is presented. Tin dioxide (SnO2) is modified by (sulfobetaine‐N,N‐dimethylamino)propyl naphthalene diimide (NDI‐B) and used as an ETL. The NDI‐B effectively reduces the interfacial nonradiative recombination between the ETL and perovskite and suppresses the ion migration by passivating oxygen‐vacancy defects in SnO2 and strongly interacting with halogen ions, respectively. Based on the NDI‐B‐blended SnO2 ETL, a record PCE of 17.48% is achieved in the ITO‐free flexible PSC fabricated at low temperature.

Publisher

Wiley

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