Affiliation:
1. School of Nano‐Tech and Nano‐Bionics University of Science and Technology of China Hefei China
2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences Suzhou China
3. Tianjin San'an Optoelectronics Co., Ltd. Tianjin China
Abstract
AbstractThe inverted metamorphic AlGaInP/AlGaAs/GaAs/InGaAs/InGaAs five‐junction solar cells with the bandgap energies of 2.0/1.67/1.42/1.18/0.83 eV were grown by metal–organic chemical vapor deposition on GaAs substrates. The mismatch stress between the two bottom (In0.17Ga0.83As and In0.46Ga0.54As) cells and GaAs substrate was nearly fully relaxed owing to the growth of AlInGaAs compositionally step‐graded buffers. By employing the low‐temperature epilayer transfer technology with only one‐time temporary bonding, the flexible five‐junction solar cells with the size of 12 cm2 were successfully fabricated. The conversion efficiency was 35.1% with the open‐circuit voltage of 4.73 V under AM1.5G spectrum. The excellent performance of the large‐size five‐junction solar cells is attributed to the low amount of mismatch dislocations in the material as well as the simple fabrication process of the flexible device.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Science and Technology Program of Suzhou
Suzhou Institute of Nanotechnology, Chinese Academy of Sciences
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials