Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay-Reference-Cited by-同舟云学术

Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay

Published:2022-04-22 Issue:4 Volume:3 Page:
ISSN:2692-4560
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language:en
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Author:

Preetha Genesh Navathej¹,De Marchi Fabrizio¹,Heun Stefan²,Fontana Stefano³,Belkhou Rachid⁴,Purandare Rahul²,Motta Nunzio⁵,Sgarlata Anna⁶,Fanfoni Massimo⁶,MacLeod Jennifer⁵,MacLean Oliver¹⁷,Rosei Federico¹

Affiliation:

1. Centre Énergie, Matériaux et Télécommunications Institut National de la Recherche Scientifique Québec Canada

2. NEST Istituto Nanoscienze‐CNR and Scuola Normale Superiore Pisa Italy

3. Sincrotrone Trieste SCpA Basovizza Italy

4. LURE, Université Paris‐Sud Orsay Cedex France

5. School of Chemistry and Physics and Centre for Materials Science Queensland University of Technology Brisbane Australia

6. Dipartimento di Fisica, Università di Roma “Tor Vergata” Rome Italy

7. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University Changchun P. R. China

Publisher

Wiley

Subject

General Medicine,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/agt2.201

Reference38 articles.

1. Order and disorder in the heteroepitaxy of semiconductor nanostructures

2. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

3. Nanostructured surfaces: challenges and frontiers in nanotechnology

4. Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering

5. Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM