An aluminum‐germanium eutectic structure for silicon wafer bonding technology-Reference-Cited by-同舟云学术

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An aluminum‐germanium eutectic structure for silicon wafer bonding technology

Published:2005-07-27 Issue:10 Volume:2 Page:3706-3709
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Perez‐Quintana I.¹²,Ottaviani G.¹,Tonini R.¹,Felisari L.¹,Garavaglia M.³,Oggioni L.³,Morin D.³

Affiliation:

1. Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, Italy

2. Permanent address: Physics Faculty, University of Havana, San Lazaro y L, 10400 La Habana, Cuba

3. STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Milano, Italy

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461755

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure evolution of dendrite and eutectic in undercooled Al70Ge30 alloy;Materials Today Communications;2024-06

2. AlGe wafer bonding in ultra-high vacuum environment;Journal of Vacuum Science & Technology B;2023-06-12

3. Wafer-Level Vacuum Packaging of Smart Sensors;Sensors;2016-10-31

4. Aluminum–germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes;Microsystem Technologies;2012-12-11

5. Low-temperature Al–Ge bonding for 3D integration;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-11

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