Reflectance-difference spectroscopy as an optical probe forin situ determination of doping levels in GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. Model for the linear electro-optic reflectance-difference spectrum of GaAs(001) aroundE1andE1+Δ1
2. Insitudetermination of free‐carrier concentrations by reflectance difference spectroscopy
3. Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties
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5. Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation
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1. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors;Advances in Materials Science and Engineering;2023-12-13
2. Data reduction for spatially resolved reflectance anisotropy spectrometer;Review of Scientific Instruments;2023-10-01
3. Adsorbate-induced modification of the surface electric field of GaAs (001)-c(4 × 4) measured via the linear electro-optic effect;physica status solidi (b);2010-06-23
4. Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001);Applied Optics;2009-10-20
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