The effect of a slight mis‐orientation angle of c‐plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films
Author:
Affiliation:
1. Nippon Institute of Technology, 4‐1 Gakuendai, Miyashiro, Saitama, 345‐8501, Japan
2. NAMIKI Precision Jewel Co. Ltd., 3‐8‐22 Shinden, Adachi‐ku, Tokyo, 123‐8511, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200405028
Reference7 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
3. Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
4. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
5. X-ray diffraction analysis of the defect structure in epitaxial GaN
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