RF-MBE growth of cubic InN films on MgO (001) substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference18 articles.
1. Growth of cubic III-nitride semiconductors for electronics and optoelectronics application
2. MOVPE growth of cubic GaN on GaAs using dimethylhydrazine
3. Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source
4. Plasma‐assisted low‐pressure metalorganic chemical vapor deposition of GaN on GaAs substrates
5. Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
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1. Effect of two-step cubic GaN buffer layer on the radio-frequency plasma-assisted molecular beam epitaxy growth of cubic AlN films grown on MgO (001) substrates;Thin Solid Films;2023-11
2. TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE;Integrated Ferroelectrics;2023-09-02
3. GaN growth on (0 0 1) and (1 1 0) MgO under different Ga/N ratios by MBE;Journal of Crystal Growth;2022-07
4. Phase transition of InN films via trimethylindium flows;Experimental and Theoretical NANOTECHNOLOGY;2020-01-15
5. Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates;physica status solidi (b);2016-11-10
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