Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering-Reference-Cited by-同舟云学术

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Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

Published:2006-09 Issue:9 Volume:41 Page:889-892
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Du Wei,Zong Fujian,Ma Honglei,Ma Jin,Zhang Min,Feng Xianjin,Li Hua,Zhang Zhigang,Zhao Peng

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference12 articles.

1. Highly conductive and transparent zinc oxide films prepared by rf magnetron sputtering under an applied external magnetic field

2. Highly transparent and conducting indium-doped zinc oxide films by spray pyrolysis

3. Growth of textured ZnO:In thin films by chemical spray deposition

4. Band structure and properties of Zn3P2— promising new infrared material∗

5. Über die Kristallstrukturen von Zn3N2, Cd3N2und Ge3N4. Metallamide und Metallnitride. IX. Mitteilung

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1. Effect of nitrogen on the properties of nanostructured zinc nitride heterojunction prepared by reactive magnetron sputtering;Materials Science in Semiconductor Processing;2022-07

2. Successful growth of Zinc Nitride thin films by vacuum tube furnace using nitrogen as source gas;Ceramics International;2021-07

3. Nano-structural variations of ZnO:N thin films as a function of deposition angle and annealing conditions: XRD, AFM, FESEM and EDS analyses;Materials Chemistry and Physics;2018-08

4. How the sputtering process influence structural, optical, and electrical properties of Zn3N2 films?;MRS Communications;2018-06

5. XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering;Nanoscale Research Letters;2017-01-04

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