Growth and crystal structure of the layered compound TlGaSe2

Abstract

AbstractThe semiconducting compound TlGaSe2 was grown by solid state reaction technique. The crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe2 crystallizes in the monoclinic system with space group C2/c (No. 15), Z = 16 and unit cell parameters a = 10.779(2) Å, b = 10.776(1) Å, c = 15.663(5) Å, β = 99.993(6)°. The structural refinement converged to R(F) = 0.0719, R(F2) = 0.0652 and S = 1.17. The structure consists of a three‐dimensional arrangement of distorted TlSe8 and GaSe4 polyhedrons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)