3D global analysis of CZ-Si growth in a transverse magnetic field with rotating crucible and crystal
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference6 articles.
1. Combined effects of crucible rotation and horizontal magnetic field on dopant concentration in a Czochralski melt
2. Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt
3. Numerical 3D modelling of turbulent melt flow in large CZ system with horizontal DC magnetic field—I: flow structure analysis
4. Numerical 3D modelling of turbulent melt flow in a large CZ system with horizontal DC magnetic field. II. Comparison with measurements
5. and Int. J. Heat Mass Transfer, accepted for publication, 2004.
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1. Growth of semiconductor silicon crystals;Progress in Crystal Growth and Characterization of Materials;2016-06
2. Symmetry Breaking in Electromagnetic Spherical Cz Crystal Growth with Rotating Crystal and Crucible;Sensor Letters;2013-12-01
3. Development of Crystal Growth Technique of Silicon by the Czochralski Method;Acta Physica Polonica A;2013-08
4. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth;Crystal Research and Technology;2012-12
5. CONTROL OF OXYGEN TRANSPORT IN THE MELT OF A CZOCHRALSKI-SILICON CRYSTAL GROWTH;Journal of Enhanced Heat Transfer;2012
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