Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band-Reference-Cited by-同舟云学术

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Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band

Published:2014-02-21 Issue:19 Volume:24 Page:2852-2858
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Simmons Christie B.¹,Akey Austin J.¹,Mailoa Jonathan P.¹,Recht Daniel²,Aziz Michael J.²,Buonassisi Tonio¹

Affiliation:

1. Massachusetts Institute of Technology; Cambridge MA 02139 USA

2. Harvard School of Engineering and Applied Sciences; Cambridge MA 02138 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Infrared detectors: status and trends

2. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

3. Properties of doped silicon and Germanium infrared detectors

4. Infrared Absorption and Photoconductivity in Irradiated Silicon

5. Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550nm

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