Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics-Reference-Cited by-同舟云学术

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Published:2014-04-09 Issue:28 Volume:24 Page:4427-4434
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kang Seung-Kyun¹,Hwang Suk-Won¹,Cheng Huanyu²,Yu Sooyoun³,Kim Bong Hoon¹,Kim Jae-Hwan¹,Huang Yonggang²,Rogers John A.⁴

Affiliation:

1. Department of Materials Science and Engineering; Frederick Seitz Materials Research Laboratory; University of Illinois at Urbana-Champaign; Urbana IL 61801 USA

2. Department of Mechanical Engineering; Civil and Environmental Engineering; Center for Engineering and Health and Skin Disease Research Center; Northwestern University; Evanston IL 60208 USA

3. Department of Chemical and Biomolecular Engineering; University of Illinois at Urbana-Champaign; Urbana IL 61801 USA

4. Department of Materials Science and Engineering Chemistry, Mechanical Science and Engineering, Electrical and Computer Engineering; Beckman Institute for Advanced Science and Technology and Frederick Seitz Materials Research Laboratory; University of Illinois at Urbana-Champaign; Urbana IL 61801 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201304293/fullpdf

Reference34 articles.

1. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

2. High dielectric constant oxides

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