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Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

  • Published:2015-03-24 Issue:18 Volume:25 Page:2708-2714
  • ISSN:1616-301X
  • Container-title:Advanced Functional Materials
  • language:en
  • Short-container-title:Adv. Funct. Mater.

Author:

Yamada Hiroyuki12,Tsurumaki-Fukuchi Atsushi1,Kobayashi Masaki3,Nagai Takuro4,Toyosaki Yoshikiyo1,Kumigashira Hiroshi3,Sawa Akihito1

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST); Higashi 1-1-1 Tsukuba Ibaraki 305-8562 Japan

2. Japan Science and Technology Agency (JST); PRESTO; Kawaguchi Saitama 332-0012 Japan

3. Photon Factory; KEK; Oho 1-1 Tsukuba Ibaraki 305-0801 Japan

4. National Institute for Materials Science(NIMS); Namiki 1-1 Tsukuba Ibaraki 305-0044 Japan

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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1. The rise of semi-metal electronics;Nature Reviews Electrical Engineering;2024-08-01

2. Electroresistance in All-Oxide RuO2/Hf0.5Zr0.5O2/ITO Ferroelectric Tunnel Junctions;ACS Applied Electronic Materials;2024-04-23

3. Ferroelectric Devices for Content-Addressable Memory;Nanomaterials;2022-12-19

4. Non-linear I-V characteristics of Co/BTO/LSMO ferroelectric tunnel junction;2022 International Semiconductor Conference (CAS);2022-10-12

5. Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study;IEEE Transactions on Electron Devices;2022-08
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