Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap-Reference-Cited by-同舟云学术

Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap

Published:2018-07 Issue:35 Volume:28 Page:1802723
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zang Yunyi¹,Jiang Tian¹²,Gong Yan¹,Guan Zhaoyong¹,Liu Chong¹,Liao Menghan¹,Zhu Kejing¹,Li Zhe¹,Wang Lili¹³,Li Wei¹³,Song Canli¹³,Zhang Ding¹³,Xu Yong¹³⁴,He Ke¹³^ORCID,Ma Xucun¹³,Zhang Shou‐Cheng⁵,Xue Qi‐Kun¹³

Affiliation:

1. State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 P. R. China

2. College of Optoelectronic Science and Engineering National University of Defense Technology Changsha 410073 P. R. China

3. Collaborative Innovation Center of Quantum Matter Beijing 100084 P. R. China

4. RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351‐0198 Japan

5. Department of Physics McCullough Building Stanford University Stanford CA 94305‐4045 USA

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

U.S. Department of Energy

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201802723

Reference30 articles.

1. The electronic properties of graphene

2. Electric Field Effect in Atomically Thin Carbon Films

3. Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

4. The Metallic Nature of Epitaxial Silicene Monolayers on Ag(111)

5. Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene

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