Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors-Reference-Cited by-同舟云学术

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Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Published:2016-12-07 Issue:19 Volume:27 Page:1603484
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhao Yuda¹,Xu Kang¹,Pan Feng¹,Zhou Changjian¹,Zhou Feichi¹,Chai Yang¹

Affiliation:

1. Department of Applied Physics; The Hong Kong Polytechnic University; Hung Hom, Kowloon Hong Kong P. R. China

Funder

Research Grants Council, University Grants Committee

Hong Kong Polytechnic University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference157 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene transistors

3. Package-Free Flexible Organic Solar Cells with Graphene top Electrodes

4. Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices

5. Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

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