Affiliation:
1. Institute of Nuclear and New Energy Technology Tsinghua University Beijing 100084 China
2. Paul Scherrer Institute Villigen 5232 Switzerland
3. Shanghai Synchrotron Radiation Facility Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201210 China
Abstract
AbstractMetal–organic nanoclusters(MOCs) are being increasingly used as prospective photoresist candidates for advanced nanoscale lithography technologies. However, insight into the irradiation‐induced solubility switching process remains unclear. Hereby, the theoretical study employing density functional theory (DFT) calculations of the alkene‐containing zirconium oxide MOC photoresists is reported, which is rationally synthesized accordingly, to disclose the mechanism of the nanoscale patterning driven by the switch of solubility from the acid‐catalyzed or electron‐triggered ligand dissociation. By evaluating the dependence of MOCs’ imaging process on photoacid, lithographies of photoresists with and without photoacid generators after exposure to ultraviolet (UV), electron beam, and soft X‐ray, it is revealed that photoacid is essential in UV lithography, but it demonstrates little effect on exposure dose in high‐energy lithography. Furthermore, theoretical studies using DFT simulations to investigate the plausible photoacid‐catalyzed, electron‐triggered dissociation, and accompanying radical reaction are performed, and a mechanism is demonstrated that the nanoscale patterning of this type of MOCs is driven by the solubility switch resulting from dissociation‐induced strong electrostatic interaction and low‐energy barrier radical polymerization with other species. This study can give insights into the chemical mechanisms of patterning, and guide the rational design of photoresists to realize high resolution and high sensitivity.
Funder
National Natural Science Foundation of China
Tsinghua University
Subject
General Materials Science,General Chemistry
Cited by
1 articles.
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