Fabrication and Characterization of 3C-SiC-Based MOSFETs
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.200606467/fullpdf
Reference26 articles.
1. Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates
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3. Band offsets and electronic structure of SiC/SiO2interfaces
4. Hall measurements as a function of temperature on monocrystalline SiC thin films
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