33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring-Reference-Cited by-同舟云学术

33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

Published:2014-06 Issue:1 Volume:45 Page:465-468
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Akimoto Kengo¹,Shima Yukinori¹,Jincho Masami¹,Nakazawa Yasutaka¹,Okazaki Kenichi¹,Koezuka Junichi¹,Ohta Masashi²,Ishihara Noritaka²,Nakashima Motoki²,Hirohashi Takuya²,Takahashi Masahiro²,Yamazaki Shunpei²

Affiliation:

1. Advanced Film Device Inc.

2. Semiconductor Energy Laboratory Co., Ltd.

Abstract

AbstractA channel‐etched IGZO field‐effect transistor (FET) using Cu wiring was fabricated. Because little Cu is diffused into a c‐axis aligned crystalline oxide semiconductor (CAAC‐OS), which is c‐axis aligned crystalline IGZO, the use of the CAAC‐OS provides favorable characteristics for a channel‐etched FET.

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2014.tb00121.x/fullpdf

Reference13 articles.

1. 15.1: Research, Development, and Application of Crystalline Oxide Semiconductor

2. S.Itoet al AM‐FPD'13 Digest 151(2013).

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. Y.Yamadaet al Jpn. J. Appl. Phys.submitted.

5. M.Tsubukuet al Proc. SID'13 Digest 166(2013).

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