Affiliation:
1. National Key Laboratory for Precision Hot Processing of Metals Harbin Institute of Technology Harbin 150001 China
2. Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China
3. School of Materials Science and Engineering, and Institute of Materials Genome & Big Data Harbin Institute of Technology Shenzhen 518055 China
Abstract
AbstractAt present, the weak thermoelectric and mechanical performance of zone‐melting bismuth telluride alloys cannot support the further improvement of cooling and processing performance of semiconductor refrigeration devices. Here, MnO2 is added into high‐strength Bi0.4Sb1.6Te3 prepared by ball milling method to optimize its thermoelectric transport properties. Via in situ reaction, Sb2O3 nano‐precipitates are formed in the matrix, which also leads to the surplus of Te element. As results, the donor‐like effect is suppressed, thereby increasing carrier concentration and power factor. Besides, volatilization of Te‐rich phases during sintering leaves plentiful nanopores, which together with Sb2O3 nano‐precipitates significantly decrease the lattice thermal conductivity. Eventually, the maximum ZT reaches 1.43 at 75 °C for the Bi0.4Sb1.6Te3+0.01MnO2 sample. On this basis, a 31‐pairs module made of the material and commercial n‐type BiTeSe produces large temperature differences (ΔT) of 70.1, 80.8, and 89.4 K at the hot‐side temperature (Th) of 300, 325, and 350 K respectively, which are highly competitive. The maximum coefficient of performance of 8.6 and cooling capacity of 7 W are achieved when Th is set as 325 K. This excellent progress will promote the further development of bismuth telluride refrigeration modules.
Funder
National Natural Science Foundation of China
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
7 articles.
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