Compromise Design of Resonant Levels in GeTe‐Based Alloys with Enhanced Thermoelectric Performance

Abstract

AbstractResonant levels (RLs) are expected to increase the density of states (DOS) abruptly, thereby increasing the Seebeck coefficient for a high thermoelectric figure of merit (ZT). However, the negative effects of RLs on reducing the carrier mobility and band gap have rarely been explored. In this work, the pros and cons of resonant‐state doping of group IIIA elements (In, Ga) in GeTe‐based alloys are studied by experimental transport properties and density‐functional‐theory calculations. RLs effects of Fermi level pinning and increased effective mass are strong in Ge0.9‐xInxSb0.1Te but weak in Ge0.9‐y(In0.5Ga0.5)ySb0.1Te, which shows dependence on the hump DOS relative to the background, location of RLs, and energy width of RLs. Using the In‐Ga co‐doping strategy to make a compromise between the DOS, carrier mobility, and bipolar transport, combined with beneficial alloying effects of Pb and Sb, a peak ZT≈ 2.1 at 773 K and a high average ZT≈ 1.43 within 300–773 K can be obtained in Ge0.78In0.005Ga0.005Pb0.1Sb0.07Te. The corresponding single‐leg device shows a remarkable energy conversion efficiency of 13.7% at a temperature difference of 451 K. This work suggests that RLs are not always beneficial for improving ZT, and the compromise design of RLs should be carefully considered to advance ZT.