Room‐Temperature Ferromagnetism and Fermi Level Pinning in Multilayer Graphene Films Derived from Ferrocene

Abstract

AbstractSpin polarization is a very important condition for spintronics applications which can easily be achieved by using ferromagnetic materials. Graphene‐based magnetic materials, which have long spin lifetime and diffusion length, are very promising as spin channel materials. In this work, Ferrocene molecules are chosen as the precursor carbon source using the chemical vapor deposition method, facilitating the synthesis of multilayer graphene films decorated with magnetic nanoclusters. This resultant material manifested planar ferromagnetism with a Curie temperature exceeding room temperature (≥300 K) and a saturation magnetization as high as 4.1 × 10−7 emu mm−2. The robust ferromagnetic coupling can plausibly be attributed to the presence of magnetic nanoclusters interspersed within the synthesized graphene, enhancing the localized magnetic moment and promoting ferromagnetic long‐range ordering. Furthermore, the Fermi level pinning at the Dirac point is observed and predominantly ascribed to the pervasive defects in the graphene derived from ferrocene. The oxygen functional groups within these defects act as charge traps, effectively anchoring the Fermi level to the Dirac point, intrinsically suppressing the ambipolar behavior of graphene. This work sheds light on potential avenues for the exploration of novel, high‐performance carbonaceous spintronics materials with economic feasibility.