Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing-Reference-Cited by-同舟云学术

Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

Published:2017-07-27 Issue:10 Volume:214 Page:1700225
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Aid Siti Rahmah¹,Uneme Takahiro²,Wakabayashi Naoki³,Yamazaki Kazunori³,Uedono Akira⁴,Matsumoto Satoru¹

Affiliation:

1. Malaysia-Japan International Institute of Technology; Universiti Teknologi Malaysia; Jalan Sultan Yahya Petra 54100 Kuala Lumpur Malaysia

2. Honda Motor Co. Ltd.; 107-8556 Tokyo Japan

3. Sumitomo Heavy Industries Ltd.; Natsushima 237-8555 Yokosuka Japan

4. Division of Applied Physics; Faculty of Pure and Applied Science; University of Tsukuba; 305-8573 Tsukuba Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Boron diffusion behavior in silicon during shallow p + /n junction formation by non-melt excimer laser annealing

2. Comparison of boron diffusion in silicon during shallow p+ /n junction formation by non-melt excimer and green laser annealing

3. Formation of Ultra Shallow p+/n Junction in Silicon Using a Combination of Low-Temperature Solid Phase Epitaxy and Non-Melt Double-Pulsed Green Laser Annealing

4. Ion implantation doping and isolation of GaN

5. Ca and O ion implantation doping of GaN

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