Separation of Individual Thermal Double‐Donor Levels by Laplace Deep‐Level Transient Spectroscopy-Reference-Cited by-同舟云学术

Separation of Individual Thermal Double‐Donor Levels by Laplace Deep‐Level Transient Spectroscopy

Published:2019-07-08 Issue:17 Volume:216 Page:1900302
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Gwozdz Katarzyna¹,Kolkovsky Vladimir²^ORCID,Weber Joerg³

Affiliation:

1. Department of Quantum TechnologiesFaculty of Fundamental Problems of TechnologyWroclaw University of Science and Technology Wybrzeze Wyspianskiego 27 50-370 Wroclaw Poland

2. Engineering DepartmentIPMS Fraunhofer Dresden Maria-Reiche Str. 2 01109 Dresden Germany

3. Technische Universität DresdenInstitut für Angewandte Physik 01062 Dresden Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900302

Reference19 articles.

1. Mechanism of the Formation of Donor States in Heat-Treated Silicon

2. Electrical and Optical Properties of Heat-Treated Silicon

3. Recombination activity associated with thermal donor generation in monocrystalline silicon and effect on the conversion efficiency of heterojunction solar cells

4. Investigating minority carrier trapping in n-type Cz silicon by transient photoconductance measurements

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