AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate-Reference-Cited by-同舟云学术

AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate

Published:2017-11-14 Issue:9 Volume:215 Page:1700642
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Comyn Rémi¹^ORCID,Chenot Sébastien¹,Alouani Wissam El¹,Nemoz Maud¹,Frayssinet Eric¹,Damilano Benjamin¹,Cordier Yvon¹

Affiliation:

1. Université Côte d'Azur, CNRS, CRHEA; rue Bernard Gregory Valbonne, 06560 France

Funder

National Research Agency

Investissements d'Avenir

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Gallium Nitride (GaN): Physics, Devices, and Technology 2016

2. T.E. Kazior R.V. Chelakara W.E. Hoke J.P. Bettencourt T. Palacios H.S. Lee Proceedings IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2011

3. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

4. Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs

5. Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

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