Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling-Reference-Cited by-同舟云学术

Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

Published:2015-01-30 Issue:4 Volume:212 Page:851-854
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Rozhavskaya M. M.¹,Lundin W. V.¹,Troshkov S. I.¹,Tsatsulnikov A. F.¹,Dubrovskii V. G.¹²³

Affiliation:

1. Ioffe Physical Technical Institute RAS Politekhnicheskaya 26 194021 St. Petersburg Russia

2. St. Petersburg Academic University Khlopina 8/3 194021 St. Petersburg Russia

3. ITMO University Kronverkskiy pr. 49 197101 St. Petersburg Russia

Abstract

We present a method for determining the diffusion lengths of Ga adatoms on GaN by combining profiling of the tops of GaN stripes obtained by selective area MOCVD and a diffusion growth model. We deduce very high values of the diffusion lengths on tops of <11–20>‐oriented stripes at 1040 °C which range from 6 μm under nitrogen‐rich to 24 μm under hydrogen‐rich atmosphere in the reactor. The obtained results show in particular that Ga‐catalyzed growth of GaN nanostructures and nanowires should not be limited by Ga influx and thus the exceptional growth rate is anticipated in such cases.

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201431912

Reference20 articles.

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2. Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography

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4. 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes

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