Drastic Scintillation Yield Enhancement of YAG:Ce with Carbon Doping-Reference-Cited by-同舟云学术

Drastic Scintillation Yield Enhancement of YAG:Ce with Carbon Doping

Published:2018-05-21 Issue:14 Volume:215 Page:1800122
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sidletskiy Oleg¹^ORCID,Arhipov Pavlo¹,Tkachenko Sergii¹,Zelenskaya Olga¹,Vasyukov Sergey¹,Moretti Federico²,Dujardin Christophe³

Affiliation:

1. Institute for Scintillation Materials NAS of Ukraine; 60 Nauky Ave. 61072 Kharkiv Ukraine

2. Department of Materials Science; University of Milano-Bicocca; Via Cozzi 55 20125 Milano Italy

3. Institut Lumière Matière UMR 5306; Université Lyon; Université Claude Bernard Lyon 1 CNRS, 69100 Villeurbanne France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800122/fullpdf

Reference32 articles.

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2. Pushing the Limits in Time-of-Flight PET Imaging

3. Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

4. Improvement of the scintillation properties of Gd3 Ga3 Al2 O12 :Ce,B single crystals having tailored defect structure

5. Light output and energy resolution of Ce3+-doped scintillators

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