Ultrathin, High‐Aspect‐Ratio Bismuth Sulfohalide Nanowire Bundles for Solution‐Processed Flexible Photodetectors

Author:

Lee Da Won1,Oh Seongkeun2,Lee Dong Hyun David3,Woo Ho Young4,Ahn Junhyuk2,Kim Seung Hyeon1,Jung Byung Ku2,Choi Yoonjoo1,Kim Dagam4,Yu Mi Yeon1,Park Chun Gwon56,Yun Hongseok7,Kim Tae‐Hyung4,Han Myung Joon3,Oh Soong Ju2,Paik Taejong14ORCID

Affiliation:

1. Department of Intelligent Semiconductor Engineering Chung‐Ang University Seoul 06974 Republic of Korea

2. Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea

3. Department of Physics Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

4. School of Integrative Engineering Chung‐Ang University Seoul 06974 Republic of Korea

5. Department of Biomedical Engineering SKKU Institute for Convergence Sungkyunkwan University (SKKU) Suwon Gyeonggi 16419 Republic of Korea

6. Department of Intelligent Precision Healthcare Convergence SKKU Institute for Convergence Sungkyunkwan University (SKKU) Suwon Gyeonggi 16419 Republic of Korea

7. Department of Chemistry and Research Institute for Convergence of Basic Science Hanyang University Seoul 04763 Republic of Korea

Abstract

AbstractIn this study, a novel synthesis of ultrathin, highly uniform colloidal bismuth sulfohalide (BiSX where X = Cl, Br, I) nanowires (NWs) and NW bundles (NBs) for room‐temperature and solution‐processed flexible photodetectors are presented. High‐aspect‐ratio bismuth sulfobromide (BiSBr) NWs are synthesized via a heat‐up method using bismuth bromide and elemental S as precursors and 1‐dodecanethiol as a solvent. Bundling of the BiSBr NWs occurs upon the addition of 1‐octadecene as a co‐solvent. The morphologies of the BiSBr NBs are easily tailored from sheaf‐like structures to spherulite nanostructures by changing the solvent ratio. The optical bandgaps are modulated from 1.91 (BiSCl) and 1.88 eV (BiSBr) to 1.53 eV (BiSI) by changing the halide compositions. The optical bandgap of the ultrathin BiSBr NWs and NBs exhibits blueshift, whose origin is investigated through density functional theory‐based first‐principles calculations. Visible‐light photodetectors are fabricated using BiSBr NWs and NBs via solution‐based deposition followed by solid‐state ligand exchanges. High photo‐responsivities and external quantum efficiencies (EQE) are obtained for BiSBr NW and NB films even under strain, which offer a unique opportunity for the application of the novel BiSX NWs and NBs in flexible and environmentally friendly optoelectronic devices.

Funder

National Research Foundation of Korea

Ministry of Science and ICT, South Korea

Publisher

Wiley

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